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| TN2460L/TN2460T Vishay Siliconix N-Channel 240-V (D-S) MOSFET PRODUCT SUMMARY Part Number TN2460L 240 TN2460T V(BR)DSS Min (V) rDS(on) Max (W) 60 @ VGS = 10 V 60 @ VGS = 10 V VGS(th) (V) 0.5 to 1.8 0.5 to 1.8 ID Min (mA) 75 51 FEATURES D D D D D Low On-Resistance: 40 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" APPLICATIONS D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-226AA (TO-92) S 1 TO-236 (SOT-23) Device Marking Front View "S" TN 2406L xxyy "S" = Siliconix Logo xxyy = Date Code G 1 3 S 2 D Marking Code: T2wll T2 = Part Number Code for TN2460T w = Week Code ll = Lot Traceability G 2 D 3 Top View TN2460L Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70205 S-04279--Rev. D , 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg TN2460L 240 "20 75 48 800 0.8 0.32 156 -55 to 150 TN2460T 240 "20 51 32 400 0.36 0.14 350 Unit V mA W _C/W _C 11-1 TN2460L/TN2460T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS TJ = 125_C VDS = 10 V, VGS =10 V ID(on) VDS = 10 V, VGS = 4.5 V VGS = 10 V, ID = 0.05 A Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.02 A TJ = 125_C Forward Transconductanceb gfs VDS = 10 V, ID = 0.05 A 30 75 20 140 130 38 40 75 70 60 60 120 mS W mA "5 0.1 5 mA m 240 0.5 260 1.65 1.8 "10 nA V Symbol Test Conditions Min Typa Max Unit On-State Drain Currentb Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 14 4 1 30 15 10 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 500 W ID ^ 0.05 A, VGEN = 10 V, RG = 25 W 8 20 20 ns 35 VNDN24 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70205 S-04279--Rev. D , 16-Jul-01 TN2460L/TN2460T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 200 VGS = 10 V 160 ID - Drain Current (mA) 4V ID - Drain Current (mA) 80 125_C 60 100 TJ = -55_C 25_C Transfer Characteristics 120 80 3V 40 2V 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 40 20 VDS = 15 V 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 100 90 rDS(on) - On-Resistance ( ) 80 70 ID = 100 mA 60 50 50 mA 40 10 mA 30 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) 0 0 rDS(on) - On-Resistance ( ) 100 125 On-Resistance vs. Drain Current VGS = 10 V 75 50 25 50 100 150 200 250 ID - Drain Current (A) Normalized On-Resistance vs. Junction Temperature 2.25 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -10 30 70 110 150 TJ - Junction Temperature (_C) Document Number: 70205 S-04279--Rev. D , 16-Jul-01 0.01 0.75 VGS = 4.5 V ID = 50 mA ID - Drain Current (mA) 10 VDS = 5 V Threshold Region TJ = 150_C 1 75_C 25__C 0.1 -55_C 1 1.25 1.5 1.75 2 2.25 2.5 VGS - Gate-Source Voltage (V) www.vishay.com 11-3 TN2460L/TN2460T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance 20 VGS = 0 V f = 1 MHz Ciss 12 VGS - Gate-to-Source Voltage (V) 16 C - Capacitance (pF) 12.5 15.0 ID = 30 mA Gate Charge 10.0 7.5 VDS = 100 V 5.0 192 V 2.5 8 Coss 4 Crss 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 0 0 50 100 150 200 250 300 Qg - Total Gate Charge (pC) Load Condition Effects on Switching 100 50 t - Switching Time (ns) VDD = 25 V RG = 25 W VGS = 0 to 10 V t - Switching Time (ns) 50 Drive Resistance Effects on Switching VDD = 25 V RL = 500 W VGS = 0 to 10 V ID = 50 mA tf 10 td(off) tr td(on) 20 10 5 td(off) tf tr td(on) 2 2 1 10 20 50 100 ID - Drain Current (A) 1 10 20 RG - Gate Resistor (W) 50 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70205 S-04279--Rev. D , 16-Jul-01 |
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